The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 1995

Filed:

Oct. 27, 1993
Applicant:
Inventors:

Robert J Cava, Bridgewater, NJ (US);

Jueinai R Kwo, Watchung, NJ (US);

Gordon A Thomas, Princeton, NJ (US);

Assignee:

AT&T Corp., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F / ; H01L / ;
U.S. Cl.
CPC ...
359 87 ; 20419229 ;
Abstract

Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by sputter deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from 100.degree. C. to 550.degree. C. in an argon-oxygen ambient of total pressure 4 mTorr to 20 mTorr with an optimal oxygen partial pressure in the range 0.5 to 2 mTorr.


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Cava, Robert. (1995). Method for growing transparent conductive gallium-indium-oxide films by (U.S. Patent No. 5473456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5473456

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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