The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Feb. 07, 2000
Minghwei Hong, Watchung, NJ (US);
Ahmet Refik Kortan, Warren, NJ (US);
Jueinai Raynien Kwo, Watchung, NJ (US);
Joseph Petrus Mannaerts, Summit, NJ (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
A high dielectric rare earth oxide of the form Mn O (such as, for example, Gd O or Y O ) is grown on a clean silicon (100) substrate surface under an oxygen partial pressure less than or equal to 10 torr to form an acceptable gate oxide (in terms of dielectric constant (∈˜18) and thickness) that eliminates the tunneling current present in ultra-thin conventional SiO dielectrics and avoids the formation of a native oxide layer at the interface between the silicon substrate and the dielectric. Epitaxial films can be grown on vicinal silicon substrates and amorphous films on regular silicon substrates to form the high dielectric gate oxide.