Juang-Ying Chueh

Title: Juang-Ying Chueh: Innovator in SRAM Cell Structures

Introduction

Juang-Ying Chueh is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the design of SRAM cell structures. His innovative work has led to advancements that are crucial for modern electronic devices.

Latest Patents

Juang-Ying Chueh holds a patent for an SRAM cell structure. This patent describes a design that includes a plurality of transistors, a set of contacts, a word-line, a bit-line, a VDD contacting line, and a VSS contacting line. The design features n transistors, where n is a positive integer less than 6. As the minimum feature size of the SRAM cell structure decreases from 28 nm, the area size of the SRAM cell remains consistent in terms of the square of the minimum feature size (λ). This innovation is essential for enhancing the efficiency and performance of SRAM technology.

Career Highlights

Throughout his career, Juang-Ying Chueh has worked with various organizations that focus on technological advancements. He has been associated with Invention and Collaboration Laboratory Pte. Ltd. and Etron Technology, Inc. His experience in these companies has allowed him to collaborate with other experts in the field and contribute to groundbreaking projects.

Collaborations

One of his notable collaborators is Chao-chun Lu. Their partnership has likely fostered innovative ideas and solutions in the realm of semiconductor technology.

Conclusion

Juang-Ying Chueh's contributions to SRAM cell structures exemplify the importance of innovation in technology. His work continues to influence the development of efficient electronic components.