Hillsboro, OR, United States of America

Ju-Hyung Nam

This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ju-Hyung Nam. Retrieved from https://idiyas.com/inventor/ju-hyung-nam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Ju-Hyung Nam: Innovator in Integrated Circuit Technology

Introduction

Ju-Hyung Nam is a notable inventor based in Hillsboro, Oregon, known for his contributions to integrated circuit technology. He holds a patent that showcases his innovative approach to circuit structures, particularly focusing on germanium-doped nanoribbon channel structures.

Latest Patents

Nam's patent, titled "Gate-all-around integrated circuit structures having germanium-doped nanoribbon channel structures," describes advanced methods for fabricating integrated circuit structures. This patent details an integrated circuit structure that features a vertical arrangement of nanowires positioned above a substrate. Notably, the individual nanowires exhibit a higher germanium concentration at their lateral mid-points compared to their ends, enhancing the performance of the circuit.

Career Highlights

Ju-Hyung Nam is currently employed at Intel Corporation, a leading technology company renowned for its innovations in semiconductor manufacturing. His work at Intel has positioned him at the forefront of research and development in integrated circuit technology.

Collaborations

Nam collaborates with esteemed colleagues, including Ryan Hickey and Glenn A Glass, who contribute to the innovative environment at Intel Corporation.

Conclusion

Ju-Hyung Nam's work in integrated circuit technology exemplifies the spirit of innovation in the field. His patent on germanium-doped nanoribbon channel structures represents a significant advancement in circuit design, showcasing his expertise and commitment to technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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