This inventor holds 14 USPTO granted patents and 6 published patent applications and 2 EPO patents. Top assignee: United Microelectronics Corp.. Active years: 2022-2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022-2025
Title: Innovations of Ju-Chun Fan
Introduction
Ju-Chun Fan is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 14 patents. His work focuses on advanced memory systems, particularly in the realm of hybrid random access memory.
Latest Patents
One of Ju-Chun Fan's latest patents is titled "System architecture, structure and method for hybrid random access memory in a system-on-chip." This patent outlines a method for manufacturing hybrid random access memory, which includes several steps such as providing a semiconductor substrate with both magnetoresistive random access memory (MRAM) and resistive random-access memory (ReRAM) regions. The process involves forming multiple ReRAM cells and MRAM cells, along with dielectric layers to support these components.
Another notable patent is related to a memory array that includes at least one strap region, multiple sub-arrays, staggered dummy magnetic storage elements, and bit line structures. This innovative design enhances the efficiency and performance of memory systems.
Career Highlights
Ju-Chun Fan is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of memory technology. His expertise and innovative approach have positioned him as a key figure in the industry.
Collaborations
Throughout his career, Ju-Chun Fan has collaborated with talented individuals such as Po-Kai Hsu and Hui-Lin Wang. These collaborations have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Ju-Chun Fan's work in the field of memory technology exemplifies innovation and dedication. His contributions through various patents have the potential to shape the future of memory systems significantly.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
