Tainan, Taiwan

Ju-Chun Fan

USPTO Granted Patents = 14 

 

Average Co-Inventor Count = 7.3

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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14 patents (USPTO):Explore Patents

Title: Innovations of Ju-Chun Fan

Introduction

Ju-Chun Fan is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 14 patents. His work focuses on advanced memory systems, particularly in the realm of hybrid random access memory.

Latest Patents

One of Ju-Chun Fan's latest patents is titled "System architecture, structure and method for hybrid random access memory in a system-on-chip." This patent outlines a method for manufacturing hybrid random access memory, which includes several steps such as providing a semiconductor substrate with both magnetoresistive random access memory (MRAM) and resistive random-access memory (ReRAM) regions. The process involves forming multiple ReRAM cells and MRAM cells, along with dielectric layers to support these components.

Another notable patent is related to a memory array that includes at least one strap region, multiple sub-arrays, staggered dummy magnetic storage elements, and bit line structures. This innovative design enhances the efficiency and performance of memory systems.

Career Highlights

Ju-Chun Fan is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of memory technology. His expertise and innovative approach have positioned him as a key figure in the industry.

Collaborations

Throughout his career, Ju-Chun Fan has collaborated with talented individuals such as Po-Kai Hsu and Hui-Lin Wang. These collaborations have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Ju-Chun Fan's work in the field of memory technology exemplifies innovation and dedication. His contributions through various patents have the potential to shape the future of memory systems significantly.

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