logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11917923 B1

PDFFull Text
Date of Patent:
Feb. 27, 2024

Filed:

Apr. 28, 2021

Magnetoresistive random access memory structure

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Hui-Lin Wang, Taipei, TW;

Ching-Hua Hsu, Kaohsiung, TW;

Si-Han Tsai, Taichung, TW;

Shun-Yu Huang, Kaohsiung, TW;

Chen-Yi Weng, New Taipei, TW;

Ju-Chun Fan, Tainan, TW;

Che-Wei Chang, Taichung, TW;

Yi-Yu Lin, Taichung, TW;

Po-Kai Hsu, Taichung, TW;

Jing-Yin Jhang, Tainan, TW;

Ya-Jyuan Hung, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02);
Abstract

A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Find Patent Forward Citations

Wang, Hui-Lin. (2024). Magnetoresistive random access memory structure (U.S. Patent No. 11917923). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11917923

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…