The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Apr. 28, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Hui-Lin Wang, Taipei, TW;
Ching-Hua Hsu, Kaohsiung, TW;
Si-Han Tsai, Taichung, TW;
Shun-Yu Huang, Kaohsiung, TW;
Chen-Yi Weng, New Taipei, TW;
Ju-Chun Fan, Tainan, TW;
Che-Wei Chang, Taichung, TW;
Yi-Yu Lin, Taichung, TW;
Po-Kai Hsu, Taichung, TW;
Jing-Yin Jhang, Tainan, TW;
Ya-Jyuan Hung, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.