The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jan. 23, 2024
United Microelectronics Corp., Hsin-Chu, TW;
Po-Kai Hsu, Tainan, TW;
Hui-Lin Wang, Taipei, TW;
Ching-Hua Hsu, Kaohsiung, TW;
Yi-Yu Lin, Taichung, TW;
Ju-Chun Fan, Tainan, TW;
Hung-Yueh Chen, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.