Burlington, VT, United States of America

Joseph P Hasselbach

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.6

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 2012-2016

Loading Chart...
4 patents (USPTO):

Title: Inventor Joseph P. Hasselbach: A Pioneer in Bipolar Junction Transistor Technology

Introduction

Joseph P. Hasselbach is an innovative inventor based in Burlington, VT, USA. With a remarkable portfolio of four patents, he has made significant contributions to the field of semiconductor technology. His most notable inventions pertain to the advancements in bipolar junction transistors, which play a crucial role in modern electronics.

Latest Patents

Hasselbach's latest patent focuses on the "Self-aligned emitter-base region." This invention provides a method of forming a bipolar junction transistor by utilizing a semiconductor substrate, which includes a uniform silicon nitride layer over an emitter pedestal and a base layer positioned below the emitter pedestal. The method involves applying a photomask at both ends of a base region and performing a silicon nitride etch with the photomask. This process simultaneously forms silicon nitride spacers adjacent to the emitter pedestal while exposing the base region of the bipolar junction transistor. Notably, the silicon nitride etch can be an end-pointed etch, enhancing the precision and efficiency of the transistor formation.

Career Highlights

Throughout his career, Joseph P. Hasselbach has worked with leading companies in the semiconductor industry, including IBM and Globalfoundries Inc. His work in these prestigious organizations has allowed him to innovate and refine technologies that are essential in the development of various electronic devices.

Collaborations

Hasselbach has collaborated with several talented individuals during his career, including Margaret A. Faucher and Paula Fisher. Together, they have contributed to groundbreaking research and development projects that have advanced the field of semiconductor technology.

Conclusion

Joseph P. Hasselbach stands out as a key figure in the realm of semiconductor innovation. His contributions to bipolar junction transistors through his research and patents demonstrate his commitment to improving electronic technology. With a successful career marked by collaborations and significant achievements, he represents the spirit of innovation that drives the industry forward.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…