International Business Machines Corporation

Globalfoundries Inc.

Joseph P Hasselbach

Qizhi Liu

Glenn C MacDougall

Paula Fisher

Thomas H Gabert

Margaret A Faucher

Anthony K Stamper

Thomas L McDevitt

Yoba Amoah

Graham M Bates

Eva A Shah

Karen L Lestage

Aspects of the invention provide a method of forming a bipolar junction transistor. The method includes: providing a semiconductor substrate including a uniform silicon nitride layer over an emitter pedestal, and a base layer below the emitter pedestal; applying a photomask at a first end and a second end of a base region; and performing a silicon nitride etch with the photomask to simultaneously form silicon nitride spacers adjacent to the emitter pedestal and exposing the base region of the bipolar junction transistor. The silicon nitride etch may be an end-pointed etch.

Self-aligned emitter-base region

A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film.

Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics

Solutions for forming a semiconductor including an oxide MEMS beam are disclosed. In one embodiment, a method of forming a beam within a sealed cavity includes: depositing a lower insulator layer comprising one or more layers; depositing an upper insulator layer over the first insulator layer, the upper insulator layer comprising one or more layers, wherein a composite stress of the upper insulator layer is different than a composite stress of the lower insulator layer.

Forming an oxide MEMS beam

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Burlington, VT, United States of America

Joseph P Hasselbach