The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2015
Filed:
Feb. 13, 2012
Margaret A. Faucher, South Burlington, VT (US);
Paula M. Fisher, Milton, VT (US);
Thomas H. Gabert, Essex Junction, VT (US);
Joseph P. Hasselbach, Burlington, VT (US);
Qizhi Liu, Lexington, MA (US);
Glenn C. Macdougall, Covington, LA (US);
Margaret A. Faucher, South Burlington, VT (US);
Paula M. Fisher, Milton, VT (US);
Thomas H. Gabert, Essex Junction, VT (US);
Joseph P. Hasselbach, Burlington, VT (US);
Qizhi Liu, Lexington, MA (US);
Glenn C. MacDougall, Covington, LA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Aspects of the invention provide a method of forming a bipolar junction transistor. The method includes: providing a semiconductor substrate including a uniform silicon nitride layer over an emitter pedestal, and a base layer below the emitter pedestal; applying a photomask at a first end and a second end of a base region; and performing a silicon nitride etch with the photomask to simultaneously form silicon nitride spacers adjacent to the emitter pedestal and exposing the base region of the bipolar junction transistor. The silicon nitride etch may be an end-pointed etch.