This inventor holds 3 USPTO granted patents. Top assignee: University of Illinois. Active years: 2004-2005.
Company Filing History:
Years Active: 2004-2005
Title: Joseph E Greene: Innovator in Epitaxial Cobalt Silicide Technology
Introduction
Joseph E Greene is a prominent inventor based in Champaign, IL (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of epitaxial cobalt silicide layers for MOS devices. With a total of 3 patents, Greene's work has advanced the capabilities of modern electronic devices.
Latest Patents
Greene's latest patents include innovative methods for forming high-quality epitaxial cobalt silicide layers. One of his notable inventions is the patent titled "Epitaxial CoSi2 on MOS devices." This invention describes a process where an SiNor SiON liner is formed on a MOS device, followed by the deposition of cobalt that reacts to create an epitaxial CoSi layer underneath the liner. This layer not only enhances the quality of the device but also serves as a protective measure during etching processes. Another significant patent is "Method for forming an epitaxial cobalt silicide layer on MOS devices," which outlines a technique for sputter depositing cobalt to achieve optimal thickness and quality in the cobalt silicide layer.
Career Highlights
Joseph E Greene is affiliated with the University of Illinois, where he has been instrumental in research and development in semiconductor technologies. His work has been recognized for its impact on improving device performance and reliability. Greene's innovative approaches have positioned him as a key figure in the field of materials science and engineering.
Collaborations
Throughout his career, Greene has collaborated with notable colleagues, including Chong Wee Lim and Ivan Petrov. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
Joseph E Greene's contributions to the field of semiconductor technology through his patents and research have significantly influenced the development of modern electronic devices. His innovative methods for forming epitaxial cobalt silicide layers demonstrate his commitment to advancing technology and improving device performance.