University of Illinois

Joseph E Greene

Ivan Petrov

Chong Wee Lim

Chan Soo Shin

Daniel Gall

Kenji Ohmori

An SiNor SiONliner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSilayer underneath the liner. The CoSilayer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSilayers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSilayer.

Epitaxial CoSi2 on MOS devices

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Method for forming an epitaxial cobalt silicide layer on MOS devices

A method for forming atomic-scale structures on a surface of a substrate on a large-scale includes creating a predetermined amount of surface vacancies on the surface of the substrate by removing an amount of atoms on the surface of the material corresponding to the predetermined amount of the surface vacancies. Once the surface vacancies have been created, atoms of a desired structure material are deposited on the surface of the substrate to enable the surface vacancies and the atoms of the structure material to interact. The interaction causes the atoms of the structure material to form the atomic-scale structures.

Growing community of inventors

Champaign, IL, United States of America

Joseph E Greene