The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Oct. 25, 2002
Chong Wee Lim, Urbana, IL (US);
Chan Soo Shin, Daejeon, KR;
Ivan Georgiev Petrov, Champaign, IL (US);
Joseph E. Greene, Champaign, IL (US);
Chong Wee Lim, Urbana, IL (US);
Chan Soo Shin, Daejeon, KR;
Ivan Georgiev Petrov, Champaign, IL (US);
Joseph E. Greene, Champaign, IL (US);
The Board of Trustees of the University of Illinois, Urbana, IL (US);
Abstract
An SiNor SiONliner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSilayer underneath the liner. The CoSilayer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSilayers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSilayer.