Daejeon, South Korea

Chan Soo Shin

This inventor holds 2 USPTO granted patents. Top assignee: University of Illinois. Active years: 2004-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chan Soo Shin. Retrieved from https://idiyas.com/inventor/chan-soo-shin-93dzg1i3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2004-2005

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Innovations of Chan Soo Shin in Epitaxial CoSilicon Technology

Introduction

Chan Soo Shin is a prominent inventor based in Daejeon, South Korea. She has made significant contributions to the field of semiconductor technology, particularly in the development of epitaxial cobalt silicide layers on MOS devices. With a total of 2 patents, her work has the potential to enhance the performance and reliability of modern electronic devices.

Latest Patents

One of her latest patents is titled "Epitaxial CoSi2 on MOS devices." This invention describes a process where an SiNor SiON liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi layer underneath the liner. The CoSi layer can be formed through either a solid phase epitaxy or a reactive deposition epitaxy salicide process. This innovation not only produces high-quality epitaxial CoSi layers but also provides protection during etching processes used to form device contacts. The liner acts as an etch stop layer, preventing excessive removal of the shallow trench isolation and protecting against the loss of the CoSi layer.

Another significant patent is "Method for forming an epitaxial cobalt silicide layer on MOS devices." This method involves sputter depositing cobalt in an ambient to create a first layer of cobalt silicide on the gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an argon ambient to increase the thickness of the cobalt silicide layer to a second thickness. This method enhances the overall performance of MOS devices.

Career Highlights

Chan Soo Shin is affiliated with the University of Illinois, where she continues her research and development in semiconductor technologies. Her innovative work has garnered attention in the field, contributing to advancements in electronic device fabrication.

Collaborations

Throughout her career, Chan has collaborated with notable colleagues, including Chong Wee Lim and Ivan Petrov. These collaborations have further enriched her research and expanded the impact of her inventions.

Conclusion

Chan Soo Shin's contributions to the field of semiconductor technology, particularly through her patents on epitaxial cobalt silicide layers, demonstrate her innovative spirit and commitment to advancing electronic device performance. Her work continues to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…