Fridolfing, Germany

Josef Frumm

This inventor holds 1 USPTO granted patent. Top assignee: Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag. Active years: 2000.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: The Innovations of Josef Frumm

Introduction

Josef Frumm is a notable inventor based in Fridolfing, Germany. He has made significant contributions to the field of semiconductor technology. His work focuses on the production of cylindrical single crystals, which are essential for various applications in electronics.

Latest Patents

Josef Frumm holds a patent for a "Process and device for producing a cylindrical single crystal." This innovative process aims to produce a cylindrical single crystal of semiconductor material with minimal alignment error of the crystal lattice. The steps involved in this process include producing a single crystal with an alignment error of at most 1.5 degrees, arranging the crystal for rotation about two axes, and grinding the lateral surface to achieve a specific uniform diameter. This patent highlights his expertise in semiconductor manufacturing and precision engineering.

Career Highlights

Frumm is associated with Wacker Siltronic Gesellschaft für Halbleitermaterialien AG, a leading company in the semiconductor industry. His work there has contributed to advancements in the production of high-quality semiconductor materials. His innovative approach has positioned him as a key figure in the field.

Collaborations

Throughout his career, Josef Frumm has collaborated with notable colleagues such as Hans Olkrug and Holger Lundt. These collaborations have fostered an environment of innovation and have led to significant advancements in semiconductor technology.

Conclusion

Josef Frumm's contributions to the semiconductor industry through his innovative patent and collaborative efforts have made a lasting impact. His work continues to influence the development of high-quality semiconductor materials.

Profile summary based on public USPTO records.
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