The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2000
Filed:
May. 25, 1999
Hans Olkrug, Tittmoning, DE;
Holger Lundt, Burghausen, DE;
Christian Andrae, Tussling, DE;
Josef Frumm, Fridolfing, DE;
Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG, Burghausen, DE;
Abstract
A process and a device will produce a cylindrical single crystal of semicuctor material with the smallest possible alignment error of the crystal lattice. A process for cutting semiconductor wafers from two or more such single crystals is by means of wire sawing. The process for producing the single crystal is as follows: (a) a single crystal with an alignment error of the crystal lattice equal to at most 1.5.degree. is produced; (b) the single crystal is arranged in such a way that the single crystal can be rotated about two axes of rotation, the axes of rotation being perpendicular to two planes that are spanned by two axes of an orthogonal coordinate system with axes x, y and z; (c) the single crystal is rotated about the axes of rotation until the crystal axis is parallel to the x,y plane and parallel to the x,z plane of the coordinate system; (d) pads are fitted to the ends of the single crystal; and (e) the single crystal is rotated about the crystal axis, the single crystal being clamped between the pads in a grinding machine, and a lateral surface of the single crystal is ground until the single crystal has a specific uniform diameter.