Pyeongtaek, South Korea

JongWon Nam

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Entegris, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: JongWon Nam. Retrieved from https://idiyas.com/inventor/jongwon-nam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: JongWon Nam: Inventor in Silicon-Film Deposition

Introduction

JongWon Nam is an inventor based in Pyeongtaek, South Korea. His patent work concerns the purification of iodosilanes, chemicals used in depositing silicon-containing films on microelectronic device substrates.

Latest Patents

The provided information lists one patent associated with Nam: “Method for Purifying Iodosilanes.” The method removes trace amounts of certain metal-ion contaminants from iodosilanes, including diiodosilane, to produce purified liquid compositions suitable for use in film-deposition processes. The patent record provided does not specify when the patent was granted or whether it is currently active. Nam is credited with 1 patent in the supplied data.

Career Highlights

Nam is associated with Entegris, Inc., a company serving the semiconductor and other advanced-technology industries. His listed invention addresses chemical purity, an important consideration in processes used to manufacture microelectronic devices.

Collaborations

The supplied information names SungCheol Yoon and Hyunho Jung as Nam’s coworkers. Their specific roles in the patent or related work are not provided.

Conclusion

JongWon Nam’s listed patent focuses on purifying iodosilanes for silicon-containing film deposition, connecting his invention to materials and processes used in microelectronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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