Jong Ho Park

Title: Jong Ho Park: Semiconductor Device Inventor

Introduction

Jong Ho Park is an inventor associated with Kaohsiung, Taiwan, and Panjit International Inc. His work includes a patent focused on semiconductor device design and manufacturing.

Latest Patents

Park is associated with 1 patent: “Semiconductor Device and Manufacturing Method Thereof.” The disclosed method describes depositing an N-drift layer on a substrate and implanting ions to form P-type pillars. It then adds an N-type epitaxial layer and uses further ion implantation to create a first P-type epitaxial layer and at least one localized P region. Field oxidation forms a second P-type epitaxial layer, followed by formation of a field oxide layer on the first P-type epitaxial layer and the N-type epitaxial layer. The localized P region extends through the N-type epitaxial layer to the field oxide layer.

Career Highlights

Park’s listed patent reflects work on semiconductor structures and fabrication processes, including epitaxial layers, ion implantation, and field oxidation. He is associated with Panjit International Inc.

Collaborations

Park’s listed coworkers include Che-ming Lin and Kwang Yeon Jun.

Conclusion

Jong Ho Park’s patent documents a semiconductor device manufacturing approach that combines layered structures, ion implantation, and field oxidation.