Seoul, South Korea

Jong Dai Park

USPTO Granted Patents = 4 


Average Co-Inventor Count = 6.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Seoul, KR (2018 - 2021)
  • Hwaseong-si, KR (2011 - 2023)

Company Filing History:


Years Active: 2011-2023

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4 patents (USPTO):Explore Patents

Title: Jong Dai Park: Innovator in Chemical-Mechanical Polishing Technologies

Introduction

Jong Dai Park is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of chemical-mechanical polishing (CMP) technologies. With a total of 4 patents, his work focuses on enhancing the efficiency and quality of polishing processes used in semiconductor manufacturing.

Latest Patents

Among his latest patents, Jong Dai Park has developed innovative CMP particles that exhibit a high polishing rate and quality. His first patent details a chemical-mechanical polishing particle and polishing slurry composition that minimizes defects and scratches due to a modified surface. The second patent presents a polishing slurry composition that maintains a stable pH over time, making it easier to store under acidic conditions. This composition includes an abrasive, a specific amount of an aluminum component, and water, ensuring optimal performance in polishing applications.

Career Highlights

Jong Dai Park is currently employed at Dongjin Semichem Co., Ltd., where he continues to advance CMP technologies. His expertise in this area has positioned him as a key figure in the development of innovative solutions for the semiconductor industry.

Collaborations

Jong Dai Park collaborates with talented individuals such as Jae Hyun Kim and Hye Jung Park, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Jong Dai Park's contributions to chemical-mechanical polishing technologies have made a significant impact on the semiconductor industry. His innovative patents and collaborative efforts continue to drive advancements in this critical field.

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