Dongjin Semichem Co., Ltd.

Jong Dai Park

Jae Hyun Kim

Jong Chul Shin

Hye Jung Park

Sung Hoon Jin

Goo Hwa Lee

Min Gun Lee

Jung Min Choi

Hyun Goo Kong

Kyu Soon Shin

Min Sung Park

Jin Hyuk Lim

Chang Yong Park

Weoun Gyuen Moon

Gyeong Sook Cho

Jae Hong Yoo

The present disclosure provides chemical-mechanical polishing (CMP) particles exhibiting a high polishing rate and a high polishing quality of generating few defects or scratches due to their modified surface thereof. The present disclosure also provides a polishing slurry composition including the polishing particles.

Chemical-mechanical polishing particle and polishing slurry composition comprising same

Disclosed is a chemical-mechanical polishing slurry composition having a small change in pH over time under an acidic condition and thus being easy to store for a long time. The chemical-mechanical polishing slurry composition includes an abrasive; an amount of about 0.000006 to 0.01 weight % of an aluminum component based on the total weight of the polishing slurry composition; and water. The number of silanol groups on a surface of the abrasive and a content of the aluminum component satisfy the requirements of following Equation 1:0.0005&#x2264;()*100&#x2264;4.5,&#x2003;&#x2003;[Equation 1]

Polishing slurry composition

The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.

Metal film polishing slurry composition, and method for reducing scratches generated when polishing metal film by using same

Disclosed herein are a chemical mechanical polishing slurry composition for chemical mechanical planarization of metal layers, which comprises a non-ionized, heat-activated nano-catalyst, and a polishing method using the same. The polishing slurry composition comprises: a non-ionized, heat-activated nano-catalyst which releases electrons and holes by energy generated in a chemical mechanical polishing process; an abrasive; and an oxidizing agent. The non-ionized heat-activated nano-catalyst and the abrasive are different from each other, and the non-ionized, heat-activated nano-catalyst is preferably a semiconductor material which releases electrons and holes at a temperature of 10 to 100&#xb0; C. in an aqueous solution state, more preferably a transition metal silicide selected from the group consisting of CrSi, MnSi, CoSi, ferrosilicon (FeSi), mixtures thereof, and most preferably, a semiconductor material such as nano ferrosilicon. The content of the content of the non-ionized, heat-activated nano-catalyst is 0.00001 to 0.1 wt % based on the total weight of the slurry composition.

Chemical mechanical polishing slurry composition including non-ionized, heat activated nano-catalyst and polishing method using the same

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Seoul, South Korea

Jong Dai Park