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For the Inventor, By the Inventor

Northfield, MN, United States of America

John M Larson

This inventor holds 16 USPTO granted patents and 3 published patent applications, primarily in Magnetic Materials. Top assignees: Avolare 2, LLC, Spinnaker Semiconductor, Inc., Niron Magnetics, Inc.. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John M Larson. Retrieved from https://idiyas.com/inventor/john-m-larson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 43.8

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 115(Granted Patents)


Company Filing History:

goldMedal6 out of 7 
 
Avolare 2, LLC
 patents
silverMedal6 out of 10 
 
Spinnaker Semiconductor, Inc.
 patents
bronzeMedal4 out of 6 
 
Niron Magnetics, Inc.
 patents

Years Active: 2004-2026

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Areas of Expertise:
Anisotropic Magnets
Iron Nitride
Permanent Magnets
Schottky Barrier
CMOS Devices
High Dielectric Transistors
Nanoparticles
MOSFET Devices
Field Effect Transistors
Manufacturing Methods
Saturation Magnetization
Soft Error Rate
16 patents (USPTO):Explore Patents
1. 12755878 - Anisotropic iron nitride permanent magnets (2026-10-06),
2. 12362082 - Coercivity-enhanced iron nitride nanoparticles with high saturation magnetization (2025-07-15),
3. 11830644 - Anisotropic iron nitride permanent magnets (2023-11-28),
4. 11309107 - Anisotropic iron nitride permanent magnets (2022-04-19),
5. 8154025 - Schottky barrier CMOS device and method (2012-04-10),
6. 8084342 - Method of manufacturing a CMOS device with zero soft error rate (2011-12-27),
7. 8058167 - Dynamic Schottky barrier MOSFET device and method of manufacture (2011-11-15),
8. 8022459 - Metal source and drain transistor having high dielectric constant gate insulator (2011-09-20),
9. 7939902 - Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate (2011-05-10),
10. 7821075 - CMOS device with zero soft error rate (2010-10-26),
11. 7294898 - Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate (2007-11-13),
12. 7291524 - Schottky-barrier mosfet manufacturing method using isotropic etch process (2007-11-06),
13. 7221019 - Short-channel Schottky-barrier MOSFET device and manufacturing method (2007-05-22),
14. 6974737 - Schottky barrier CMOS fabrication method (2005-12-13),
15. 6949787 - Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate (2005-09-27),

Title: The Innovative Contributions of John M Larson

Introduction

John M Larson is a prominent inventor based in Northfield, MN (US), known for his significant contributions to the field of materials science. With a total of 15 patents to his name, Larson has made remarkable advancements, particularly in the development of iron nitride nanoparticles and magnetic materials.

Latest Patents

Among his latest patents, Larson has developed coercivity-enhanced iron nitride nanoparticles with high saturation magnetization. This innovation describes iron nitride nanoparticles characterized by a core and shell morphology, where the shell is designed to facilitate the nitriding of the core. These magnetic materials exhibit a saturation magnetization greater than approximately 160 emu/g and a coercivity exceeding about 700 Oe. Another notable patent is for anisotropic iron nitride permanent magnets, which includes a plurality of aligned iron nitride nanoparticles. These nanoparticles contain α″-FeN phase domains, and the patent specifies a unique ratio of integrated intensities of x-ray diffraction peaks that enhances their magnetic properties.

Career Highlights

Throughout his career, John M Larson has worked with several companies, including Spinnaker Semiconductor, Inc. and Avolare 2, LLC. His work in these organizations has contributed to the advancement of semiconductor technologies and innovative materials.

Collaborations

Larson has collaborated with notable individuals in his field, including John P Snyder and Francis Johnson. These partnerships have likely fostered a creative environment that has led to groundbreaking innovations.

Conclusion

John M Larson's contributions to the field of materials science, particularly through his patents on iron nitride nanoparticles, highlight his role as a leading inventor. His work continues to influence advancements in magnetic materials and semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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