The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Jul. 16, 2004
Applicants:
John P. Snyder, Edina, MN (US);
John M. Larson, Northfield, MN (US);
Inventors:
John P. Snyder, Edina, MN (US);
John M. Larson, Northfield, MN (US);
Assignee:
Spinnaker Semiconductor, Inc., Eagan, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface scattering, which enables the strained substrate to provide improved power and speed performance characteristics in this device, as compared to conventional devices.