Fort Collins, CO, United States of America

John M Freeseman


Average Co-Inventor Count = 2.6

ph-index = 6

Forward Citations = 114(Granted Patents)


Location History:

  • Fort Collins, CO (US) (2003 - 2005)
  • Ft Collins, CO (US) (2008)

Company Filing History:


Years Active: 2003-2008

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9 patents (USPTO):Explore Patents

Title: Innovations of John M Freeseman

Introduction

John M Freeseman is a notable inventor based in Fort Collins, Colorado. He has made significant contributions to the field of memory devices, holding a total of 9 patents. His work focuses on improving redundancy analysis and testing methodologies in memory technology.

Latest Patents

One of his latest patents is titled "Memory device fail summary data reduction for improved redundancy analysis." This invention provides a method and apparatus for filtering failures in memory tests, allowing for a more accurate assessment of memory device performance. It includes mechanisms for tracking redundant row and column failures, ensuring that only relevant data is considered during testing. Another significant patent is "Method and apparatus for administering inversion property in a memory tester." This invention allows a tester memory to store an inversion mask, which indicates which memory cells are logically inverted during testing. This innovation enhances the efficiency of memory testing processes.

Career Highlights

Throughout his career, John has worked with prominent companies such as Agilent Technologies, Inc. and Verigy (Singapore) Pte. Ltd. His experience in these organizations has contributed to his expertise in memory technology and testing methodologies.

Collaborations

John has collaborated with several professionals in his field, including Alan S Krech, Jr. and Randy L Bailey. These collaborations have likely enriched his work and led to further advancements in memory device technology.

Conclusion

John M Freeseman's contributions to memory technology through his patents and career experiences highlight his role as an influential inventor. His innovative approaches continue to shape the future of memory devices and testing methodologies.

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