John M Barden is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on enhancing the performance and efficiency of MOS devices and trench capacitors.

Latest Patents

One of his latest patents is the MOS transistor isolation method. This innovative method employs a series of oxide growth and etch-back operations to form the isolation region of an MOS device. The process creates oxidation susceptible layers within oxidation resistant areas, effectively confining the effects of thermal oxidation to specific areas of the MOS device. This results in a reduction of the thickness of both oxidized and non-oxidized regions.

Another significant patent is the high capacitance trench capacitor and well extension process. This process is designed for fabricating high-capacitance trench capacitors in a lightly doped, shallow well of a semiconductor substrate. It involves a two-step doped glass deposition and diffusion routine, which enhances the capacitance of the capacitor while improving isolation between trench devices.

Career Highlights

John M Barden has had a distinguished career at Motorola Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to improvements in device performance and reliability.

Collaborations

Throughout his career, Barden has collaborated with esteemed colleagues such as Howard K Leung and Richard W Mauntel. These collaborations have fostered a productive environment for innovation and development in the semiconductor field.

Conclusion

John M Barden's contributions to semiconductor technology through his patents and work at Motorola Corporation highlight his role as a key innovator in the industry. His advancements continue to influence the development of efficient and high-performance electronic devices.