The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1992
Filed:
Sep. 30, 1991
Applicant:
Inventors:
John M Barden, Tempe, AZ (US);
Ping Wang, Chandler, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 70 ; 437 61 ; 437 69 ;
Abstract
A series of oxide growth and etch-back operations is employed to form the isolation region of an MOS device (10). The series of operations forms an oxidation susceptible layer (14) into oxidation resistant areas (21) and oxidation susceptible areas (19) thereby confining the effects of a thermal oxidation procedure to the oxidation susceptible areas (19) of the MOS device (10). The thickness of both the oxidized (19) and non-oxidized regions (21) is reduced. Another oxidation is performed and the oxidized material (19, 21) is thinned.