The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1988
Filed:
Jun. 15, 1987
Applicant:
Inventor:
John M Barden, Albuquerque, NM (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437047 ; 357 24 ; 357 45 ; 357 91 ; 437 59 ; 437 60 ; 148D / ;
Abstract
A process for forming a DRAM cell having a capacitor adjacent a field effect transistor (FET), wherein the FET fabrication area is protected from adverse effects of the capacitor formation. The process is misalignment tolerant and provides FETs with appreciably lower defects in the substrate beneath the FET. Additionally, the process eliminates the need to stop an etching operation on a thin capacitor dielectric layer.