Company Filing History:
Years Active: 1978-1989
Title: John G Pasko: Innovator in Photodiode Technology
Introduction
John G Pasko is a notable inventor based in Thousand Oaks, CA (US). He has made significant contributions to the field of semiconductors, particularly in the development of photodiodes. With a total of 3 patents to his name, Pasko's work has advanced the technology used in light detection.
Latest Patents
Pasko's latest patents include the HgMnCdTe avalanche photodiode and the inverted heterojunction photodiode. The HgMnCdTe avalanche photodiode is designed for detecting light at a predetermined wavelength. It features a first semiconducting region that is a quaternary alloy of Hg, Mn, Cd, and Te, which is crucial for achieving the desired bandgap energy. The inverted heterojunction photodiode, on the other hand, is a low-leakage device sensitive to infrared radiation. This diode structure utilizes a PbTe substrate and an epitaxial active layer, creating a p-n junction that enhances its detection capabilities.
Career Highlights
John G Pasko is currently employed at Rockwell International Corporation, where he continues to innovate in the field of photodiodes. His work has been instrumental in developing advanced semiconductor technologies that have applications in various industries.
Collaborations
Pasko has collaborated with notable coworkers such as Joseph T Longo and John E Clarke. Their combined expertise has contributed to the successful development of innovative technologies in the semiconductor field.
Conclusion
John G Pasko's contributions to photodiode technology exemplify his commitment to innovation in the semiconductor industry. His patents reflect a deep understanding of materials science and engineering, paving the way for future advancements.