The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1978
Filed:
Sep. 01, 1976
Applicant:
Inventors:
John Elwood Clarke, Newbury Park, CA (US);
Austin M Andrews, II, Newbury Park, CA (US);
Edward R Gertner, Newbury Park, CA (US);
Joseph T Longo, Thousand Oaks, CA (US);
John G Pasko, Thousand Oaks, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148171 ; 29572 ; 148-15 ; 148172 ; 148175 ; 357 16 ; 357 30 ;
Abstract
A method of making a junction in semiconductive materials to improve the spectral response of the junction in photovoltaic detectors. A first layer of semiconductive material is grown, by epitaxy technique, on a substrate of semiconductive material of the same conductivity type. Growth of the first layer is discontinued and the temperature is changed. Then a second layer of opposite conductivity type is grown on the first layer.