Location History:
- Thousand Oaks, CA (US) (1977)
- Newbury Park, CA (US) (1977 - 1980)
Company Filing History:
2 out of 3,430 
2 out of 4,992 
Years Active: 1977-1980
Title: John E Clarke: Innovator in Photodiode Technology
Introduction
John E Clarke is a notable inventor based in Newbury Park, California. He holds a total of 4 patents that showcase his contributions to the field of semiconductor technology, particularly in photodiodes.
Latest Patents
One of his latest patents is for an inverted heterojunction photodiode. This innovative device is designed to be a low-leakage detector sensitive to infrared radiation. The diode structure features a PbTe substrate of n-type conductivity, complemented by an n-type epitaxial buffer layer and an epitaxial active layer. The buffer layer can be either Pb.sub.(1-x) S.sub.x Te or Pb.sub.1-x Se.sub.x Te, with specific atomic fractions of S or Se. The active layer consists of Pb.sub.1-y Sn.sub.y Te, with a defined atomic fraction of Sn. A p-n junction is created in the active layer, ensuring optimal performance. Additionally, Clarke has developed a method for growing a junction in semiconductive materials to enhance the spectral response of photovoltaic detectors.
Career Highlights
Throughout his career, John E Clarke has worked with prominent organizations, including Rockwell International Corporation and the United States Air Force. His work has significantly impacted the development of advanced semiconductor technologies.
Collaborations
Clarke has collaborated with notable individuals such as Joseph T Longo and Austin M Andrews, II. These partnerships have contributed to the advancement of his innovative projects.
Conclusion
John E Clarke's work in photodiode technology and semiconductor materials has established him as a significant figure in the field. His patents reflect a commitment to innovation and excellence in technology.