The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 1977
Filed:
Apr. 12, 1976
Austin M Andrews, II, Newbury Park, CA (US);
John E Clarke, Newbury Park, CA (US);
Edward R Gertner, Thousand Oaks, CA (US);
Joseph T Longo, Thousand Oaks, CA (US);
Richard C Eden, Newbury Park, CA (US);
Abstract
An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile