The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1980
Filed:
Jun. 26, 1978
Cheng-Chi Wang, Thousand Oaks, CA (US);
John G Pasko, Thousand Oaks, CA (US);
Joseph T Longo, Thousand Oaks, CA (US);
John E Clarke, Newbury Park, CA (US);
Rockwell International Corporation, El Segundo, CA (US);
Abstract
A low-leakage, heterojunction photodiode for use as a detector sensitive to infrared radiation is provided. The diode structure comprises a PbTe substrate of n-type conductivity with an n-type epitaxial buffer layer on the substrate and an epitaxial active layer on the buffer layer. The buffer layer is either Pb.sub.(1-x) S.sub.x Te or Pb.sub.1-x Se.sub.x Te with the atomic fraction of S or Se, x, being greater than 0 but less than 0.1. The active layer is Pb.sub.1-y Sn.sub.y Te with the atomic fraction of Sn, y, being greater than 0 but less than 0.3. There is a p-n junction created in the active layer with the n side of the junction being adjacent the buffer layer. Metal is deposited on the substrate and on the active layer to provide electrical contact to the diode.