Company Filing History:
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1 out of 832,966 Years Active: 1976-1990
Title: **Innovative Contributions of John E. Davey in Semiconductor Technology**
Introduction
John E. Davey, an accomplished inventor based in Alexandria, VA, is renowned for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 11 patents, Davey has focused primarily on the development of advanced field-effect transistors (FETs), particularly those made from Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (AlGaAs). His inventions emphasize innovation in electronic devices, aiming to enhance performance and efficiency.
Latest Patents
Davey’s latest patents include groundbreaking methods for making self-aligned GaAs/AlGaAs FETs. His innovative method outlines a systematic approach where a selectively doped heterostructure substrate is utilized. Significant features include the deposition of an uppermost GaAs layer, followed by etching techniques leading to the creation of an angular recess. This recess then allows for the deposition of a refractory metal gate of tantalum silicide, which is crucial for reducing noise within the device. Additionally, his self-aligned GaAs FET design addresses critical issues such as charge trapping and provides a unique Schottky barrier contact, essentially improving device performance by minimizing unwanted noise.
Career Highlights
Throughout his career, John E. Davey has made significant strides while working with the United States of America, as represented by the Secretary of the Navy. His work has often aimed at enhancing the capabilities and applications of semiconductor components in various technological fields, contributing to both military and civilian uses. His accumulated patents stand as a testament to his dedication and innovative spirit in semiconductor research and development.
Collaborations
John E. Davey has collaborated with notable colleagues such as Aristos Christou and Harry B. Dietrich. These collaborations exemplify the importance of teamwork in the advancement of technology, fostering an environment where innovative ideas can flourish and lead to the development of cutting-edge solutions in the semiconductor sector.
Conclusion
John E. Davey's work in the realm of GaAs and AlGaAs FET technology illustrates his commitment to innovation and excellence. His patents not only represent significant advancements in semiconductor design but also pave the way for future research and development in the field. With a rich background and a portfolio that continues to inspire, Davey's contributions stand as pivotal in the evolution of electronic devices.