The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 1980
Filed:
Aug. 11, 1978
John E Davey, Alexandria, VA (US);
Aristos Christou, Springfield, VA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A solid-state diffusion method for providing ohmic contacts to n-type Group II-V semiconductor materials, such as gallium arsenide (GaAs). The material is successively cleaned, etched, rinsed, re-etched, rinsed and placed in an oil-free vacuum. The substrate is then heated to desorb surface oxides and an epitaxial layer of germanium and a layer of nickel, or other refractory, are deposited on the substrate at specific temperatures. Next, the structure is annealed in the vacuum at temperatures sufficient to diffuse the germanium into the GaAs material and to establish an ohmic contact.