John Bayruns

Title: Innovations of John Bayruns in High Electron Mobility Transistors

Introduction

John Bayruns is an accomplished inventor based in Raritan, NJ (US). He has made significant contributions to the field of electronics, particularly in the development of high electron mobility transistors (HEMTs). With a total of 2 patents, his work has paved the way for advancements in transistor technology.

Latest Patents

Bayruns' latest patents include a dual-operation depletion/enhancement mode high electron mobility transistor. This invention features a field-effect transistor (FET) that incorporates a p-doped or acceptor-doped layer beneath the FET channel, enabling enhanced operational capabilities. The tunable threshold voltage is achieved through a voltage applied to the p-doped layer via a threshold-control terminal (TCT). This innovation allows for dual E/D mode operation with a single-polarity positive power supply voltage, enhancing the versatility of HEMTs.

Another notable patent focuses on the fabrication of a dual enhancement-mode/depletion-mode (E-Mode/D-Mode) HEMT, known as the threshold control terminal HEMT (TCT-HEMT). This design reduces parasitic capacitance between the TCT electrode and the source and drain electrodes, facilitating high-frequency operation. The method for fabricating this FET includes several steps, such as providing a substrate, forming a doped layer, and disposing a TCT contact on the TCT access layer.

Career Highlights

Bayruns is currently employed at Duet Microelectronics, Inc., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of HEMTs, making them more efficient and effective for various applications.

Collaborations

Throughout his career, Bayruns has collaborated with notable colleagues, including Robert J Bayruns and Ashok T Ramu. These partnerships have contributed to the successful development of his patents and innovations.

Conclusion

John Bayruns is a prominent figure in the field of high electron mobility transistors, with a focus on enhancing their operational capabilities. His contributions through innovative patents have significantly impacted the electronics industry.