Westford, VT, United States of America

John B Campi, Jr

This inventor holds 40 USPTO granted patents and 1 published patent application, primarily in Gate-All-Around Fin Devices. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2011-2021.

USPTO Granted Patents = 40 

% Patents Active = 60.0

Average Co-Inventor Count = 5.2

ph-index = 8

Forward Citations = 200(Granted Patents)


Company Filing History:


Years Active: 2011-2021

Loading Chart...
Areas of Expertise:
Gate-All-Around Fin Device
Electrostatic Discharge
High Voltage LDMOSFET
Silicon-Controlled Rectifiers
Double Gate MOSFET
Interface Resistance
Robust ESD Protection
Stress Enhanced Junction Engineering
Electrical Overstress Protection
NPNP Structure
FinFET Technology
40 patents (USPTO):Explore Patents

Title: John B Campi, Jr: Innovator in Gate-All-Around Fin Devices

Introduction: John B Campi, Jr. is an accomplished inventor based in Westford, Vermont. With a remarkable portfolio of 40 patents to his name, he has made significant contributions to the fields of semiconductor technology and device manufacturing. His innovations are characterized by their groundbreaking approaches to fin technology, particularly in the realm of gate-all-around structures.

Latest Patents: One of his notable recent patents is for a gate-all-around fin double diffused metal oxide semiconductor (DMOS) device. This patent details a method that includes forming multiple fin structures from a substrate. Additionally, the method outlines the formation of wells of both a first and a second conductivity type within the substrate. It also covers the creation of source and drain contacts on the fin structures. Notably, a gate structure is incorporated in a dielectric fill material surrounding the first fin structure, optimizing performance and efficiency.

Career Highlights: John has had a stellar career, working extensively with prominent companies in the technology sector. He has been associated with International Business Machines Corporation (IBM) and Globalfoundries Inc., where he has utilized his engineering expertise to drive innovation in semiconductor fabrication.

Collaborations: Throughout his career, John has collaborated with skilled professionals such as Robert J Gauthier, Jr. and Mujahid Muhammad. These collaborations have contributed to his success and the advancement of technologies within the semiconductor field.

Conclusion: John B Campi, Jr. stands out as a leading inventor whose work in gate-all-around fin devices has significantly shaped the semiconductor industry. His 40 patents reflect a deep understanding of complex technology and a commitment to advancing electronic device performance. Through his career and collaborations, he continues to inspire future innovations in semiconductor technology.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…