Johan Agus Darmawan

Title: Innovations by Inventor Johan Agus Darmawan

Introduction

Johan Agus Darmawan, an accomplished inventor based in Cupertino, CA, holds a remarkable portfolio of seven patents. His significant contributions to the field of semiconductor technology highlight his expertise and innovative spirit.

Latest Patents

Among his latest patents is the invention of a laterally diffused MOS transistor featuring an N+ source contact to an N-doped substrate. This advancement reduces source resistance by fabricating the transistor within a P-doped epitaxial layer on an N-doped semiconductor substrate, utilizing a trench contact to achieve an ohmic connection between the N-doped source region and the substrate. Additionally, Darmawan has developed a LDMOS transistor with an improved gate shield that minimizes drain coupling to the gate shield and source. This is accomplished by carefully limiting the thickness of the gate shield and containing the source contact to the source region without any overlap with the gate.

Career Highlights

Throughout his career, Johan Agus Darmawan has made significant strides in the semiconductor industry. He has worked with well-known organizations such as Cree Microwave, Inc. and Cree GmbH, where he has been able to apply his innovative ideas and engineering skills.

Collaborations

Johan has collaborated with several industry professionals, including notable coworkers John Mason and Jeff A. Babcock. Together, they have contributed to advancing technology in the field and fostering a culture of innovation.

Conclusion

In summary, Johan Agus Darmawan's work exemplifies the essence of innovation in semiconductor technology. His seven patents, marked by sophisticated design and application, underscore his substantial impact in the industry. It is through his collaborations and career endeavors that Darmawan continues to inspire and shape the future of technological advancements.