The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2004
Filed:
Nov. 21, 2002
Applicant:
Inventors:
Johan Darmawan, Cupertino, CA (US);
John Mason, Sunnyvale, CA (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
An improved laterally diffused MOS (LDMOS) transistor architecture is provided by using a nitride cap on a gate structure and forming a spacer around the gate structure and then self-aligning a source contact and drain contact with a gate by using the same mask for source and drain dopant implantation and for silicide formation with all source and drain areas being silicided. The reduced source/drain on resistance (Rdson), shorter distance from channel to source contact, and better gate oxide integrity improves operating linearity, increases Ft and GM and reduces the drift in Idq and Rdson.