The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2011
Filed:
Jun. 12, 2008
Applicants:
Jeff Babcock, Santa Clara, CA (US);
Johan Agus Darmawan, Cupertino, CA (US);
John Mason, Sunnyvale, CA (US);
Inventors:
Jeff Babcock, Santa Clara, CA (US);
Johan Agus Darmawan, Cupertino, CA (US);
John Mason, Sunnyvale, CA (US);
Assignee:
Rovec Acquisitions Ltd., LLC, Wilmington, DE (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2005.12);
U.S. Cl.
CPC ...
Abstract
Reduced source resistance is realized in a laterally diffused MOS transistor by fabricating the transistor in a P-doped epitaxial layer on an N-doped semiconductor substrate and using a trench contact for ohmically connecting the N-doped source region to the N-doped substrate.