Joerg Radecker

This inventor holds 5 USPTO granted patents. Top assignees: Globalfoundries Inc., Infineon Technologies Ag. Active years: 2006-2014.

USPTO Granted Patents = 5

% Patents Active = 40.0

Average Co-Inventor Count = 2.1

ph-index = 1

Forward Citations = 9(Granted Patents)

Company Filing History:

Infineon Technologies Ag

patents

Years Active: 2006-2014

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5 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8722479 - Method of protecting STI structures from erosion during processing operations (2014-05-13),

2. 8716102 - Methods of forming isolation structures for semiconductor devices by performing a dry chemical removal process (2014-05-06),

3. 8603895 - Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequence (2013-12-10),

4. 8569143 - Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI) (2013-10-29),

5. 7052970 - Method for producing insulator structures including a main layer and a barrier layer (2006-05-30),

Title: Joerg Radecker - Innovative Inventor from Dresden

Introduction: Joerg Radecker is a renowned inventor hailing from Dresden, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Joerg Radecker holds several patents in the areas of renewable energy, sustainable technologies, and advanced manufacturing processes, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Joerg Radecker has worked with leading research institutions and technology companies, playing a pivotal role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Joerg Radecker has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Joerg Radecker's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.

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