Method for producing insulator structures including a main layer and a barrier layer

Abstract

In order to produce insulator structures (), insulator trenches () with aspect ratios of greater than 4:1 are introduced into a semiconductor substrate () from a substrate surface () and filled with an insulator filling (). The insulator filling () is formed from a plurality of portions () which are deposited successively in situ in an HDP/CVD process chamber in the course of an HDP/CVD deposition process. A main layer () is provided made from fluorine-doped silicon oxide with good filling properties. A barrier layer () is formed directly before the deposition of the main layer (), said barrier layer preventing an outgassing of the fluorine from the fluorine-doped silicon oxide (), an interaction of the fluorine with the semiconductor substrate () and a formation of defect areas () with oxide of low quality in the area of the insulator filling (). The barrier () makes it possible to form nondegrading p-channel transistors () in the area of the substrate surface (). An additional layer () and a termination layer () respectively effect an adaptation and linking of the main layer () and of the barrier layer () to preceeding and succeeding process steps.