Planegg, Germany

Joachim Hoepfner


Average Co-Inventor Count = 2.2

ph-index = 8

Forward Citations = 207(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (1999 - 2001)
  • Planegg, DE (1978 - 2004)

Company Filing History:


Years Active: 1978-2004

where 'Filed Patents' based on already Granted Patents

16 patents (USPTO):

Title: Innovations of Joachim Hoepfner

Introduction

Joachim Hoepfner is a notable inventor based in Planegg, Germany. He has made significant contributions to the field of semiconductor technology and ferroelectric materials. With a total of 16 patents to his name, his work has had a considerable impact on the industry.

Latest Patents

One of his latest patents is a method for producing a ferroelectric layer. This method involves preparing a substrate, applying a layer of material that will be converted into the ferroelectric layer, and then changing the material into the ferroelectric layer by applying an outer electrical field aligned with the desired direction in the ferroelectric material, followed by heat treatment. By providing a first noble metal electrode on the surface before applying the material, and subsequently forming a second noble metal electrode on the ferroelectric layer, a ferroelectric storage capacitor can be created. If the substrate includes memory cells with at least one transistor for each cell and the aforementioned ferroelectric storage capacitors, a ferroelectric memory arrangement can be produced.

Another significant patent is a method for fabricating an integrated semiconductor product. This process begins with providing a semiconductor wafer that has preformed semiconductor components. The next steps include forming at least one connection, exposing it from the wafer front surface, applying a protective layer, and treating the wafer front surface through a chemical mechanical polishing (CMP) step to make the connection accessible again.

Career Highlights

Throughout his career, Joachim Hoepfner has worked with prominent companies such as Siemens Aktiengesellschaft and Infineon Technologies AG. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor technology.

Collaborations

He has collaborated with notable coworkers, including Martin Schrems and Jack Allan Mandelman. Their combined expertise has contributed to the advancement of technology in their respective fields.

Conclusion

Joachim Hoepfner's contributions to the field of semiconductor technology and ferroelectric materials are noteworthy. His innovative patents and collaborations have significantly influenced the industry, showcasing his expertise and dedication to advancing technology.

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