The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 1992
Filed:
Dec. 03, 1990
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 357 34 ; 148D / ;
Abstract
Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the heterobipolar transistor is grown. Subsequently, the base implantation is introduced using a dummy-emitter as a mask. Using a dielectric mask covering the region not covered by the dummy-emitter, after the removal of the dummy-emitter the emitter contact layers are selectively grown in its region. The contacting is then provided.