This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Jo-Lan Chin: Innovator in Semiconductor Technology
Introduction
Jo-Lan Chin is a prominent inventor based in Hefei City, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure that enhances manufacturing processes.
Latest Patents
Jo-Lan Chin holds a patent for a semiconductor structure and method for manufacturing this structure. The patent describes a semiconductor structure that includes a peripheral region and an array region. A substrate is provided, along with an active layer corresponding to the peripheral region. A word line groove is formed in the substrate for the array region, where a word line is created. This word line consists of a first and a second conductive layer, stacked one on top of the other. The first layer features a protrusion that extends towards the second layer. An isolation layer covers the substrate, with two through holes that expose the active layer and the protrusion.
Career Highlights
Jo-Lan Chin is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the capabilities of memory technologies.
Collaborations
One of his notable coworkers is Si Zhang, with whom he collaborates on various projects within the semiconductor field.
Conclusion
Jo-Lan Chin's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Changxin Memory Technologies, Inc. highlight his role as a key player in the industry.