This inventor holds 1 USPTO granted patent. Top assignee: Macronix International Co., Ltd.. Active years: 2005.
Company Filing History:
Years Active: 2005
Title: Jiun-Yi Tseng: Innovator in Non-Volatile Memory Technology
Introduction
Jiun-Yi Tseng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a unique memory cell that utilizes metal nano-particles for charge trapping.
Latest Patents
One of Jiun-Yi Tseng's notable patents is titled "Non-volatile memory cell having metal nano-particles for trapping charges and fabrication thereof." This patent describes a non-volatile memory cell that comprises a substrate, a charge-trapping layer, a gate, and a source/drain. The charge-trapping layer includes an insulating layer and metal nano-particles, which are formed through the thermal dissociation of an oxide of the same metal. The design of this memory cell enhances its efficiency and performance.
Career Highlights
Jiun-Yi Tseng is currently associated with Macronix International Co., Ltd., a leading company in the semiconductor industry. His work at Macronix has allowed him to focus on advancing memory technologies and contributing to the company's innovative projects.
Collaborations
Throughout his career, Jiun-Yi Tseng has collaborated with talented individuals such as Hsiang-Lan Lung and Kuang-Yeu Hsieh. These collaborations have fostered a creative environment that promotes the development of cutting-edge technologies.
Conclusion
Jiun-Yi Tseng's contributions to non-volatile memory technology exemplify his innovative spirit and dedication to advancing the field. His work continues to influence the development of efficient memory solutions in the semiconductor industry.