The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Aug. 25, 2003
Hsiang-lan Lung, Hsinchu, TW;
Kuang-yeu Hsieh, Hsinchu, TW;
Ruichen Liu, Hsinchu, TW;
Tai-bor Wu, Hsinchu, TW;
Jiun-yi Tseng, Hsinchu, TW;
Hsiang-Lan Lung, Hsinchu, TW;
Kuang-Yeu Hsieh, Hsinchu, TW;
Ruichen Liu, Hsinchu, TW;
Tai-Bor Wu, Hsinchu, TW;
Jiun-Yi Tseng, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A non-volatile memory cell is described. The non-volatile memory cell comprises a substrate, a charge-trapping layer, a gate and a source/drain. The charge-trapping layer comprises an insulating layer and metal nano-particles contained therein, wherein the metal nano-particles are formed with thermal dissociation of an oxide of the same metal. The gate is disposed on the charge-trapping layer, and the source/drain is located in the substrate beside the gate.