Jinsui Liang

Title: Jinsui Liang: Innovator in Transient Voltage Suppressor Technology

Introduction

Jinsui Liang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of transient voltage suppressor devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Jinsui Liang holds a patent for a device and method for a transient voltage suppressor. This device includes a semiconductor substrate of a first conductivity type, along with first and second semiconductor regions of a second conductivity type overlying the substrate. The design features a semiconductor layer of the second conductivity type that covers the semiconductor regions. A first trench extends through the semiconductor layer and the first semiconductor region into the substrate, filled with a material of the second conductivity type. The device also incorporates a clamping diode and two P-N diodes, enhancing its functionality and efficiency in voltage suppression.

Career Highlights

Jinsui Liang is currently employed at Shanghai Sim-bcd Semiconductor Manufacturing Limited. His role at the company allows him to apply his knowledge and skills in semiconductor manufacturing and innovation. With a focus on developing advanced technologies, he continues to contribute to the growth and success of the organization.

Collaborations

Jinsui Liang has worked alongside talented colleagues, including Francis Edward Hawe and Xiaoqiang Cheng. Their collaborative efforts in the semiconductor field have fostered an environment of innovation and creativity.

Conclusion

Jinsui Liang's contributions to the field of transient voltage suppression demonstrate his commitment to advancing semiconductor technology. His patent and work at Shanghai Sim-bcd Semiconductor Manufacturing Limited highlight his role as an influential inventor in the industry.