Shanghai Sim-bcd Semiconductor Manufacturing Limited

Jinsui Liang

Francis Edward Hawe

Xianfeng Liu

Xiaoqiang Cheng

A transient voltage suppressor (TVS) device includes a semiconductor substrate of a first conductivity type, and a first and a second semiconductor regions of a second conductivity type overlying the semiconductor substrate. A semiconductor layer of the second conductivity type overlies the first and the second semiconductor regions. The TVS device has a first trench extending through the semiconductor layer and the first semiconductor region and into the semiconductor substrate, and a fill material of the second conductivity type disposed in the first trench. A clamping diode in the TVS device has a junction between an out-diffused region from the fill material and a portion of the semiconductor substrate. The TVS device also includes a first P-N diode formed in a first portion of the semiconductor layer, and a second P-N diode having a junction between the second semiconductor region and the semiconductor substrate.

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Shanghai, China

Jinsui Liang