The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2013

Filed:

Apr. 30, 2010
Applicants:

Francis Edward Hawe, Santa Clara, CA (US);

Jinsui Liang, Shanghai, CN;

Xiaoqiang Cheng, Shanghai, CN;

Xianfeng Liu, Shanghai, CN;

Inventors:

Francis Edward Hawe, Santa Clara, CA (US);

Jinsui Liang, Shanghai, CN;

Xiaoqiang Cheng, Shanghai, CN;

Xianfeng Liu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transient voltage suppressor (TVS) device includes a semiconductor substrate of a first conductivity type, and a first and a second semiconductor regions of a second conductivity type overlying the semiconductor substrate. A semiconductor layer of the second conductivity type overlies the first and the second semiconductor regions. The TVS device has a first trench extending through the semiconductor layer and the first semiconductor region and into the semiconductor substrate, and a fill material of the second conductivity type disposed in the first trench. A clamping diode in the TVS device has a junction between an out-diffused region from the fill material and a portion of the semiconductor substrate. The TVS device also includes a first P-N diode formed in a first portion of the semiconductor layer, and a second P-N diode having a junction between the second semiconductor region and the semiconductor substrate.


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