Jinman Yang

Title: Jinman Yang: Innovator in High-Electron-Mobility Transistors

Introduction

Jinman Yang is a notable inventor based in Santa Clara, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron-mobility transistors (HEMTs). With a total of 2 patents to his name, Yang continues to push the boundaries of innovation in this critical area.

Latest Patents

One of Jinman Yang's latest patents is for a high-electron-mobility transistor with buried interconnect. This HEMT features a substrate layer of silicon, with a first contact on one surface and multiple layers on the opposite surface. The design includes a second contact and a gate contact situated on those layers. A trench filled with conducting material extends through the layers and into the substrate. In one embodiment, the first contact serves as a drain contact while the second acts as a source contact. In another embodiment, these roles are reversed.

Career Highlights

Jinman Yang is currently employed at Vishay Siliconix, where he applies his expertise in semiconductor technology. His work focuses on enhancing the performance and efficiency of electronic devices through innovative transistor designs. His contributions have been instrumental in advancing the capabilities of modern electronics.

Collaborations

Yang has collaborated with several talented individuals in his field, including Ayman Shibib and Kyle Terrill. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Jinman Yang is a prominent figure in the realm of high-electron-mobility transistors, with a proven track record of innovation and collaboration. His work at Vishay Siliconix and his patented technologies continue to influence the future of semiconductor applications.