The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Jul. 06, 2017
Vishay-siliconix, Santa Clara, CA (US);
Ayman Shibib, San Jose, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Yongping Ding, Santa Clara, CA (US);
Jinman Yang, Santa Clara, CA (US);
VISHAY-SILICONIX, San Jose, CA (US);
Abstract
A high-electron-mobility transistor (HEMT) includes a substrate layer of silicon, a first contact disposed on a first surface of the substrate layer, and a number of layers disposed on a second surface of the substrate layer opposite the first surface. A second contact and a gate contact are disposed on those layers. A trench containing conducting material extends completely through the layers and into the substrate layer. In an embodiment of the HEMT, the first contact is a drain contact and the second contact is a source contact. In another embodiment of the HEMT, the first contact is a source contact and the second contact is a drain contact.